Semiconductor device and method for manufacturing the same, circuit substrate and electronic apparatus

ABSTRACT

The invention enhances reliability and achieves higher speeds for semiconductor devices with a stacked structure. A semiconductor device includes a die pad, a plurality of semiconductor chips stacked on one surface of the die pad, leads extending toward the die pad, first wires that are bonded to first pads of a first semiconductor chip among the plurality of semiconductor chips and to second pads of a second semiconductor chip among the plurality of semiconductor chips, second wires that are bonded to the leads and to the first pads or the second pads, and a sealing material that seals the plurality of semiconductor chips and exposes another surface of the die pad.

[0001] This is a Division of application Ser. No. 10/327,968 filed Dec.26, 2002. The entire disclosure of the prior application is herebyincorporated by reference herein in its entirety.

BACKGROUND OF THE INVENTION

[0002] 1. Field of Invention

[0003] The present invention relates to semiconductor devices, methodsfor manufacturing the same, circuit substrates and electronic devices.

[0004] 2. Description of Related Art

[0005] The related art includes semiconductor devices having a stackedstructure that realize high density mounting. For example, a related artconfiguration includes a plurality of semiconductor chips stacked one ontop of the other on a die pad of a lead frame, in which thesemiconductor chips are electrically connected to leads by wires. Inthis case, electrodes of each of the semiconductor chips are directlybonded to the leads by the wires.

[0006] However, the distance between the electrodes of the semiconductorchips and the leads is greater than the distance between the electrodesof the different semiconductor chips. Also, when the wires are routedaround from the leads as starting points to each of the semiconductorchips, the entire length of the wires becomes long. For this reason, theresistance of the wires becomes greater, which has sometimes preventedenhancements toward higher speeds. Also, since the wires are long, theyare therefore apt to become short-circuited with other wires.

SUMMARY OF THE INVENTION

[0007] The present invention addresses or solves the problems describedabove, and enhances reliability and achieves higher speeds forsemiconductor devices with a stacked structure.

[0008] A semiconductor device in accordance with the present inventionincludes:

[0009] a die pad;

[0010] a plurality of semiconductor chips stacked on one surface of thedie pad;

[0011] a lead extending toward the die pad;

[0012] a first wire that is bonded to a first pad of a firstsemiconductor chip among the plurality of semiconductor chips and to asecond pad of a second semiconductor chip among the plurality ofsemiconductor chips;

[0013] a second wire that is bonded to the lead and to one of the firstpad and the second pad; and

[0014] a sealing material that seals the plurality of semiconductorchips and exposes another surface of the die pad.

[0015] In accordance with the present invention, the first wire isbonded to the first pad of the first semiconductor chip and the secondpad of the second semiconductor chip. In other words, the first andsecond semiconductor chips are directly, electrically connected to eachother by the first wire. For this reason, the entire length of the wires(the length of the first and second wires combined) can be made to beshorter compared to the case where wires are lead out from the leads asstarting points to the first and second pads. As a result, the materialcost for the wires can be reduced, and semiconductor devices can achievehigher speeds since the entire wire resistance can be lowered. Also,since the overall wire length is short, the first and second wires areprevented or substantially prevented from becoming short-circuited.

[0016] In the semiconductor device, the second semiconductor chip may bemounted on the first semiconductor chip, and the second wire may bebonded to the lead and to the second pad.

[0017] In the semiconductor device, the second wire may be lead out topass above the first wire.

[0018] As a result, the first and second wires are prevented orsubstantially prevented from becoming short-circuited.

[0019] In the semiconductor device, the second wire may be lead out totraverse the first wire.

[0020] As a result, the second wire can be routed around freely withoutbeing limited to configurations in which the first wire is routedaround.

[0021] In the semiconductor device, the second wire may be overlappedwith and bonded to the first wire on the second pad.

[0022] As a result, even when the second pad region is narrow, aplurality of wires can be bonded to the second pad.

[0023] In the semiconductor device, the second wire may include a ballformed on a tip thereof, and the ball may be press-bonded to the firstwire.

[0024] As a result, by press-bonding the ball on the second wire to apart of the first wire on the second pad, the bonded section of thefirst wire and the second wire can be reinforced.

[0025] In the semiconductor device, the second wire may be bonded to thesecond pad that is bonded to the first wire, while avoiding a bondedsection of the first wire.

[0026] As a result, for example, the first and second wires do not haveto be overlapped with each other, and therefore the first and secondwires can be securely bonded to the second pad.

[0027] In the semiconductor device,

[0028] the second semiconductor chip may include a plurality of thesecond pads,

[0029] the plurality of the second pads may include a group of pads thatare electrically connected to one another by a wiring,

[0030] the first wire may be bonded to one of the group of pads, and

[0031] the second wire may be bonded to another of the group of pads.

[0032] As a result, for example, the first and second wires do not haveto be overlapped with each other, and therefore the first and secondwires can be securely bonded to the second pad.

[0033] In the semiconductor device,

[0034] the second pad may be provided with a bump, and

[0035] the first wire and the second wire may be bonded to the secondpad through the bump.

[0036] In the semiconductor device, the second semiconductor chip may bemounted on the first semiconductor chip, and the second wire may bebonded to the lead and to the first pad.

[0037] In the semiconductor device, the first semiconductor chip may bea memory, and the second semiconductor chip may be a microprocessor.

[0038] A circuit substrate in accordance with the present inventionmounts the aforementioned semiconductor device.

[0039] An electronic device in accordance with the present inventionincludes the aforementioned semiconductor device.

[0040] A method for manufacturing a semiconductor device in accordancewith the present invention includes:

[0041] (a) stacking a plurality of semiconductor chips on one surface ofa die pad;

[0042] (b) bonding a first wire to a first pad of a first semiconductorchip among the plurality of semiconductor chips and to a second pad of asecond semiconductor chip among the plurality of semiconductor chips;

[0043] (c) bonding a second wire to a lead that extends toward the diepad and to one of the first pad and the second pad; and

[0044] (d) sealing the plurality of semiconductor chips and exposinganother surface of the die pad.

[0045] In accordance with the present invention, the first wire isbonded to the first pad of the first semiconductor chip and the secondpad of the second semiconductor chip. In other words, the first andsecond semiconductor chips are directly, electrically connected to eachother by the first wire. For this reason, the entire length of the wires(the length of the first and second wires combined) can be made to beshorter compared to the case where wires are lead out from the leads asstarting points to the first and second pads. As a result, the materialcost for the wires can be reduced, and semiconductor devices can achievehigher speeds since the entire wire resistance can be lowered. Also,since the overall wire length is short, the first and second wires areprevented or substantially prevented from becoming short-circuited.

[0046] In the method for manufacturing a semiconductor device,

[0047] in step (a), the second semiconductor chip may be mounted on thefirst semiconductor chip, and

[0048] in step (c), the second wire may be bonded to the lead and thesecond pad.

[0049] In the method for manufacturing a semiconductor device,

[0050] in step (c), the second wire may be lead out to pass over thefirst wire.

[0051] As a result, the first and second wires are prevented orsubstantially prevented from becoming short-circuited.

[0052] In the method for manufacturing a semiconductor device,

[0053] in step (c), the second wire may be lead out to traverse thefirst wire.

[0054] As a result, the second wire can be routed around freely withoutbeing limited to configurations in which the first wire is routedaround.

[0055] In the method for manufacturing a semiconductor device,

[0056] in step (c), the second wire may be overlapped with and bonded tothe first wire on the second pad.

[0057] As a result, even when the second pad region is narrow, aplurality of wires can be bonded to the second pad.

[0058] In the method for manufacturing a semiconductor device,

[0059] in step (c), a ball may be formed on a tip portion of the secondwire, and the ball may be press-bonded to the first wire.

[0060] As a result, by press-bonding the ball on the second wire to apart of the first wire on the second pad, the bonded section of thefirst wire and the second wire can be reinforced.

[0061] In the method for manufacturing a semiconductor device,

[0062] in steps (b) and (c), the first wire and the second wire may bebonded to the second pad without forming balls.

[0063] In the method for manufacturing a semiconductor device,

[0064] in step (c), the second wire may be bonded to the second pad thatis bonded to the first wire, while avoiding a bonded section of thefirst wire.

[0065] As a result, for example, the first and second wires do not haveto be overlapped with each other, and therefore the first and secondwires can be securely bonded to the second pad.

[0066] In the method for manufacturing a semiconductor device, thesecond semiconductor chip may include a plurality of the second pads,

[0067] the plurality of the second pads may include a group of pads thatare electrically connected to one another by a wiring,

[0068] in step (b), the first wire may be bonded to one of the group ofpads, and

[0069] in step (c), the second wire may be bonded to another of thegroup of pads.

[0070] As a result, for example, the first and second wires do not haveto be overlapped with each other, and therefore the first and secondwires can be securely bonded to the second pad.

[0071] In the method for manufacturing a semiconductor device,

[0072] in steps (b) and (c),

[0073] the second pad may be provided with a bump, and

[0074] the first wire and the second wire may be bonded to the secondpad through the bump.

BRIEF DESCRIPTION OF THE DRAWINGS

[0075] FIGS. 1(A) and 1(B) are schematics that show a semiconductordevice in accordance with a first embodiment of the present invention;

[0076]FIG. 2 is a schematic that shows a semiconductor device inaccordance with the first embodiment of the present invention;

[0077]FIG. 3 is a schematic that shows a semiconductor device inaccordance with an exemplary modification of the first embodiment;

[0078]FIG. 4 is a schematic that shows a semiconductor device inaccordance with an exemplary modification of the first embodiment;

[0079] FIGS. 5(A)-5(C) are schematics that show a method formanufacturing semiconductor devices in accordance with the firstembodiment;

[0080] FIGS. 6(A)-6(C) are schematics that show a method formanufacturing semiconductor devices in accordance with an exemplarymodification of the first embodiment;

[0081]FIG. 7 is a schematic that shows a semiconductor device inaccordance with a second embodiment of the present invention;

[0082]FIG. 8 is a schematic that shows a semiconductor device inaccordance with a third embodiment of the present invention;

[0083]FIG. 9 is a schematic that shows a circuit substrate on which asemiconductor device in accordance with an embodiment of the presentinvention is mounted;

[0084]FIG. 10 is a perspective view that shows an electronic apparatusin accordance with an embodiment of the present invention;

[0085]FIG. 11 is a perspective view that shows an electronic apparatusin accordance with an embodiment of the present invention.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

[0086] Embodiments of the present invention are described below withreference to the accompanying drawings. However, the present inventionis not limited to the exemplary embodiments described below.

[0087] (First Embodiment)

[0088] Referring to FIG. 1(A)-FIG. 6(C), a semiconductor device inaccordance with a first embodiment and a method for manufacturing thesame will be described.

[0089] As shown in FIG. 1(A), the semiconductor device in accordancewith the present embodiment includes multiple semiconductor chips, a diepad 30, leads 34, first and second wires 40 and 50, and sealing material60. FIG. 1(B) is a plan view of part of the semiconductor device thatshows a configuration of the first and second wires 40 and 50.

[0090] The multiple semiconductor chips include first and secondsemiconductor chips 10 and 20. In FIG. 1(A), two semiconductor chips(the first and second semiconductor chips 10 and 20) are stacked inlayers. Alternatively, three or more semiconductor chips can be stackedin layers. In such a case, the first and second semiconductor chips 10and 20 correspond to two of the multiple semiconductor chips.

[0091] The first semiconductor chip 10 may often have a rectangularsolid configuration. Circuit elements (such as transistors) are formedin one of faces of the first semiconductor chip. The first semiconductorchip 10 includes one or multiple first pads 12. The first pad 12 may bea rectangular-(for example, square) shaped pad, or a circular-(forexample, round) shaped pad. The first pad 12 may be formed into a thin,flat configuration with aluminum metal or copper metal. The first pad 12may often be formed on the side of the surface where circuit elementsare provided. The first pad 12 may often be arranged along at least oneof the sides (for example, along opposing two or four sides) of a faceof the first semiconductor chip 10. Also, a passivation film (not shown)is formed on the first semiconductor chip 10 except at least one part ofthe first pad 12. The passivation film is formed from, for example,SiO₂, SiN, polyimide resin or the like.

[0092] The second semiconductor chip 20 may be a similar shape as thefirst semiconductor chip 10. When the second semiconductor chip 20 ismounted on the first semiconductor chip 10, the outer shape of thesecond semiconductor chip 20 may preferably be smaller than the outershape of the first semiconductor chip 10. The second semiconductor chip20 has one or multiple second pads 22. For the other structure, theabove description for the first semiconductor chip 10 can be applied.

[0093] The first and second semiconductor chips 10 and 20 are stacked inlayers on the die pad 30. The die pad 30 is formed through processingcopper or iron plate material, and generally in a rectangularconfiguration. In FIG. 1(A), the first semiconductor chip 10 is mountedon the die pad 30, and the second semiconductor chip 20 is mounted onthe first semiconductor chip 10. In this case, the first semiconductorchip 10 is face-up bonded to the die pad 30, and the secondsemiconductor chip 20 is face-up bonded to the first semiconductor chip10. The second semiconductor chip 20 is mounted on the firstsemiconductor chip 10 in a manner to avoid the multiple first pads 12.The second semiconductor chip 20 may be mounted generally in the centerof the first semiconductor chip 10.

[0094] In FIG. 1(A), the first semiconductor chip 10 is adhered to thedie pad 30 by adhesive 32. The adhesive 32 may be present in a gapbetween the first and second semiconductor chips 10 and 20. Athermosetting resin may be used as the adhesive 32, or a material havinga high heat transfer rate, such as metal paste (silver paste or thelike), may be used. By doing so, the heat generated during operation ofthe first and second semiconductor chips 10 and 20 can be readilyemanated through the die pad 30.

[0095] Multiple leads 34 extend toward the die pad 30. The leads 34 mayoften be formed from the same material as that of the die pad 30. Theleads 34 include inner leads 36 and outer leads 38. The inner leads 36are portions that are to be sealed by sealing material 60 (to bedescribed below), and the outer leads 38 are portions that are lead outthe sealing material 60, and are used for electrical connection withexternal elements. The outer leads 38 are bent in a specified shape (agull-wing shape in FIG. 1(A)). Metal coating 39 of brazing material (forexample, solder) or zinc may be formed on the outer leads 38.

[0096] The first pads 12 and the second pads 22 are electricallyconnected to one another by first wires 40. More specifically, one endsection of the first wire 40 is bonded to the first pad 12, and theother end section of the first wire 40 is bonded to the second pad 22.The first wires 40 may be formed from metal, such as, for example, gold,aluminum or copper.

[0097] Bumps 42 may be provided on the first pads 12. The material ofthe bumps 42 may preferably be the same material of the first wires 40to be bonded, and may be, for example, gold. The bumps 42 may be part ofthe first wires 40. In other words, the bumps 42 may be formed fromballs that are formed at tip sections of the first wires 40 andsquashed. By forming the bumps 42 at the first pads 12, the bondingstrength between the first wires 40 and the first pads 12 can beenhanced.

[0098] In the present embodiment, the second pads 22 and the leads 34(more specifically, the inner leads 36) are electrically connected toone another by second wires 50. More specifically, one end section ofthe second wire 50 is bonded to the second pad 22, and the other endsection of the second wire 50 is bonded to the lead 34. The second wires50 may be formed from the same material as that of the first wires 40.

[0099] Bumps 52 may be provided on the second pads 22. The material ofthe bumps 52 may preferably be the same material of the first and secondwires 40 and 50 to be bonded, and may be, for example, gold. The bumps52 may be part of the second wires 50. In other words, the bumps 52 maybe formed from balls that are formed at tip portions of the second wires50 and squashed. By forming the bumps 52 at the second pads 22, thebonding strength between the second wires 50 and the second pads 22 canbe enhanced.

[0100] Alternatively, the bumps 52 may be part of the first wires 40.Also, bumps may be provided on the leads 34 at their bonding sectionswith the second wires 50 (see FIG. 6(C)). By forming the bumps on theleads 34, the bonding strength between the second wires 50 and the leads34 can be enhanced.

[0101] As shown in FIG. 1(A), the second wires 50 are lead out above thefirst wires 40. In other words, loops of the first wires 40 are lead outin a manner not to exceed loops of the second wires 50. By so doing, thefirst and second wires 40 and 50 can be prevented or substantiallypresented from becoming short-circuited.

[0102] In the example shown in FIG. 1(A) and FIG. 1(B), the first andsecond wires 40 and 50 are overlapped with one another on and bonded tothe second pads 22. In accordance with this structure, the leads 34 andthe first pads 12 can be electrically connected through the first andsecond wires 40 and 50. Moreover, even when the second pads 22 areprovided in a narrow region, the first and second wires 40 and 50 can bebonded to the second pads 22. The second wires 50 may be overlapped onthe first wires 40. By so doing, the second wires 50 can be readily leadout above the first wires 40.

[0103] As shown in FIG. 1(A), the sealing material 60 seals the multiplesemiconductor chips. More specifically, the sealing material 60 sealsthe first and second semiconductor chips 10 and 20, the first and secondwires 40 and 50, and the inner leads 36. The sealing material 60 mayoften be resin (for example, epoxy resin). The sealing material 60exposes part of the die pad 30. More specifically, the sealing material60 exposes a surface of the die pad 30 opposite to its surface where thefirst and second semiconductor chips 10 and 20 are mounted. By so doing,the heat generated during operation of the first and secondsemiconductor chips 10 and 20 can be readily emanated through the diepad 30.

[0104] As shown in FIG. 2, the second wire 50 may be lead out in amanner to traverse the first wire 40. More specifically, in a plan viewof the first and second semiconductor chips 10 and 20, the first andsecond wires 40 and 50 may cross each other. In this case, the first andsecond wires 40 and 50 are disposed in a manner not to contact with eachother. For example, the second wire 50 may be lead out above the firstwire 40. In accordance with this structure, the second wire 50 can berouted around freely without being restricted by the configuration inwhich the first wire 40 is routed. In other words, the positions of thefirst pads 12, second pads 22 and leads 34 can be freely designedwithout being limited by the configuration in which the first and secondwires 40 and 50 are routed.

[0105] The multiple semiconductor chips may include, for example, avariety of memories, such as a flash memory, SRAM (Static RAM) and DRAM(Dynamic RAMs), or a microprocessor, such as MPU (Micro Processor Unit)and MCU (Micro Controller Unit). For example, the first and secondsemiconductor chips 10 and 20 may be a combination of a memory and amicroprocessor, or memories (a flash memory and an SRAM, SRAMs, orDRAMs). In the example shown in FIG. 1(A), the first semiconductor chip10 is a memory (for example, a flash memory), and the secondsemiconductor chip 20 is a microprocessor.

[0106]FIG. 3 shows an exemplary modification of the semiconductor devicein accordance with the present embodiment. In the present example, thesecond semiconductor chip 20 includes one or multiple (one in FIG. 3)second pads 24. The first and second wires 40 and 50 are bonded to thesecond pad 24 in a manner that they do not overlap with each other. Morespecifically, the first wire 40 is bonded to part of the second pad 24,and the second wire 50 is bonded to another part of the second pad 24 ata location that avoids the bonding section of the first wire 40. Inother words, in a plan view of one of the second pads 24, the bondingsections of the first and second wires 40 and 50 are arranged side byside. By this, the first and second wires 40 and 50 do not need to beoverlapped with each other, such that the first and second wires 40 and50 can be securely bonded to the second pads 24. As shown in FIG. 3, thesecond pad 24 may have an outer shape with an area that is greater thanan outer shape of each of the other pads formed on the secondsemiconductor chip 20. For example, the second pad 24 may be a rectanglewith a shorter side equivalent to one side of a square shape of each ofthe other pads.

[0107]FIG. 4 shows another exemplary modification of the semiconductordevice in accordance with the present embodiment. In the presentexample, the second semiconductor chip 20 includes a group of (two inFIG. 4) pads 26 that are electrically connected by a wiring 28. Thefirst wire 40 is bonded to one of the group of pads 26, and the secondwire 50 is bonded to another one of the group of pads 26. In accordancewith this structure, the first and second wires 40 and 50 do not have tobe overlapped with each other, and therefore the first and second wires40 and 50 can be securely bonded to the second pads 22.

[0108] The wiring 28 is formed on a face of the second semiconductorchip 20 where the group of pads 26 are formed. The wiring 28 may beformed together with the group of pads 26 in the process ofmanufacturing the second semiconductor chip 20. In this case, the wiring28 may be formed form the same material (for example, aluminum metal orcopper metal) as that of the group of pads 26. As shown in FIG. 4,another pad (for example, the second pad 22) may be formed between thepads in the group of pads 26. In the present example, since the pads areelectrically connected to one another, wires do not have to be lead outfrom all of the corresponding pads 26 in the group to the firstsemiconductor chip 10 and to the lead 34. Therefore, the number of theentire wires can be reduced.

[0109] In accordance with the present embodiment, the first wires 40 arebonded to the first pads 12 of the first semiconductor chip 10 and tothe second pads 22 of the second semiconductor chip 20. In other words,the first wires 40 are bonded to the first pads 12 of the firstsemiconductor chip 10 and to the second pads 22 of the secondsemiconductor chip 20. In other words, the first and secondsemiconductor chips 10 and 20 are directly, electrically connected toone another by the first wires 40. For this reason, the entire length ofthe wires (the length of the first and second wires 40 and 50 combined)can be made to be shorter compared to the case where wires are lead outfrom the leads 34 as starting points to the first and second pads 12 and22. As a result, the material cost for the wires can be reduced, andsemiconductor devices can achieve higher speeds since the entire wireresistance can be lowered. Also, since the overall wire length is short,the first and second wires 40 and 50 are prevented or substantiallypresented from becoming short-circuited.

[0110] Next, descriptions are provided as to a method for manufacturingsemiconductor devices in accordance with an embodiment of the presentinvention. FIGS. 5(A) through 6(C) show portions of the method formanufacturing semiconductor devices (wire bonding process).

[0111] First, a die bonding process is conducted. More specifically,first and second semiconductor chips 10 and 20 are mounted on a die pad30. For example, by using adhesive 32, the die pad 30 and the firstsemiconductor chip 10 may be adhered, and the first semiconductor chip10 and the second semiconductor chip 20 may be adhered.

[0112] Next, a wire bonding process is conducted. For example, firstpads 12 and second pads 22 are electrically connected by wires, and thesecond pads 22 and inner leads 36 of leads 22 are electrically connectedby wires. In the wire bonding process, as indicated in FIGS. 5(A)-6(C),a nail head method may be employed. Alternatively, a wedge method, whichdoes not form balls at tip portions, may be employed.

[0113] As indicated in FIG. 5(A), a capillary 70 is disposed on the sideof a face of the first semiconductor chip 10 where the first pads 12 areformed. A first wire 40 (which is a conductive line that becomes a firstwire) is passed through the capillary 70. A ball 41 is formed on thefirst wire 40 outside the capillary 70. The ball 41 may be formed at atip of the first wire 41 by, for example, a high voltage electricaldischarge by an electric torch. Then, a damper 72 is released to lowerthe capillary 70, thereby pressing the ball 41 against the first pad 12.While the ball 41 is pressed against the first pad 12 under a constantpressure to perform a contact bonding, ultrasonic or heat is applied. Asa result, the bump 42 is formed on the first pad 12, and the first wire40 is bonded to the first pad 12 (i.e., first bonding).

[0114] Then, the damper 72 is closed to retain the first wire 40, andthe capillary 70 and the damper 72 are simultaneously controlled, asindicated in FIG. 5(A), to make a loop on the first wire 40. Then, apart of the first wire 40 is pressed against the second pad 22 toperform a contact bonding with the second pad 22, thereby bonding thefirst wire 40 to the second pad 22 (i.e., second bonding). In otherwords, the first wire 40 is bonded to the second pad 22 without forminga ball. For example, when the diameter of the first wire 40 is about25-30 μm, a pressure of about 0.20-0.30N is applied to squash the firstwire 40 to have a width equivalent to about 1.5-2 times the diameter. Inthis case, ultrasonic or heat is applied when performing the contactbonding.

[0115] As indicated in FIG. 5(A), when the position of the first bonding(for example, the position of the first pad 12) is lower than theposition of the second bonding (for example, the position of the secondpad 22), the loop height of the first wire 40 can be made lower,compared to the case when they are in an inverse relation. Accordingly,the semiconductor device can be made to be thinner.

[0116] Next, as indicated in FIG. 5(B), the second wire 50 is bonded tothe second pad 22 and to the lead 34, in a similar manner as the bondingof the first wire 40. For example, a first bonding to the second pad 22may be conducted, and a second bonding to the inner lead 36 may beconducted. In the first bonding, a ball 51 is formed on a tip portion ofthe second wire 50 in a manner described above, and the ball 51 ispressed against the second pad 22. When the first and second wires 40and 50 are overlapped with each other and bonded, the ball 51 is pressedagainst a part of the first wire 40 on the second pad 22 to form a pump52 on the first wire 40. By so doing, the bonded section of the firstwire 40 and the second pad 22 can be enforced. When the position of thefirst bonding (for example, the position of the second pad 22) is lowerthan the position of the second bonding (for example, the position ofthe inner lead 36), the loop height of the second wire 50 can be made tobe lower, compared to the case when they are in an inverse relationship.Accordingly, the semiconductor device can be made to be thinner. On thesecond pad 22, the first wire 40 does not form a standing portion thatmay rise from the bump 42. Therefore, even when the second wire 50 maybe bonded on the first wire 40, the first wire 40 falls and can beprevented or substantially prevented from becoming short-circuited withother wires.

[0117] As an exemplary modification of the wire bonding process, asshown in FIGS. 6(A)-6(C), bumps 80 may be provided on the second pads22, and a second bonding of the second wires 50 through the bumps 80 maybe conducted. The bumps 80 may preferably be formed from the samematerial as that of the first wires 40, and may be, for example, gold.The bump 80 may be formed as follows. A ball is formed at a tip portionof a wire (not shown), the wire is torn off at a section near its tipportion to leave the ball on the second pad 22. Then, the bump 80 may besubject to a leveling to planarize its upper surface.

[0118] Alternatively, the bumps 80 may be formed by an electrolyticplating or an electroless plating. In this case, in the state of asemiconductor wafer, the bumps 80 may be formed all together. A surfacelayer of the bump 80 may preferably be formed from the same material asthat of the first wire 40 (for example, gold). When the bumps 80 areformed by an electrolytic plating or an electroless plating, uppersurfaces of the bumps 80 can be readily be planarized, such that thefirst wires 40 can be securely bonded to the bumps 80. Also, the secondpads 22 are covered by the bumps (for example, gold bumps) 80.Therefore, even when the bonding position of the first wires (forexample, gold wires) is somewhat shifted, they can be pressure-welded.

[0119] As indicated in FIG. 6(B), the second wires 50 may be bonded tothe inner leads 36 in a first bonding, and to the second pads 22 in asecond bonding. When the first and second wires 40 and 50 are overlappedwith each other and bonded, the first and second wires 40 and 50 arebonded on the bump 80. In this case, as indicated in FIG. 6(C), thefirst and second wires 40 and 50 may be bonded to the bump 80 withoutforming any ball.

[0120] The wire bonding process is not limited to the examples describedabove, and is applicable to other structures which are consistent withthe above-description.

[0121] After the wire bonding process is completed, a molding process isconducted. More particularly, the die pad 30 on which the first andsecond semiconductor chips 10 and 20 are mounted is set on a metal mold(not shown) for molding. The metal mold is formed of an upper mold and alower mold. A recessed section is formed in each of the upper mold andthe lower mold, where the recessed sections of both of the molds definea mold cavity. Sealing material (for example, thermosetting resin) isinjected in the cavity to seal the first and second semiconductor chips10 and 20, the first and second wires 40 and 50 and the inner leads 34.

[0122] Thereafter, a trimming process such as cutting bump burrs, aplating process, such as plating on the outer leads, a forming processand the like are conducted. Furthermore, other processes including amarking process and a testing process are conducted. The semiconductordevice is manufactured via the processes described above.

[0123] The semiconductor device in accordance with the presentembodiment includes structures that may derive from the manufacturingmethod described above. The same effects described above can be obtainedfrom the method for manufacturing semiconductor devices.

[0124] (Second Embodiment)

[0125]FIG. 7 shows a semiconductor device in accordance with a secondembodiment of the present invention. In the present embodiment, firstpads 12 and leads 34 (more specifically, inner leads 36) areelectrically connected to one another by second wires 150. Morespecifically, one end section of the second wire 150 is bonded to thefirst pad 12, and the other end section of the second wire 150 is bondedto the lead 34. In this case, bumps 152 may be provided on the firstpads 12, and the bumps 152 may be formed by squashed balls that areformed at tip portions of the second wires 150.

[0126] In accordance with the present embodiment, the first and secondwires 40 and 150 do not overlap with one another except at the firstpads 12 when viewed in a plan view of the first semiconductor chip 40.Therefore, the first and second wires 40 and 150 can be prevented orsubstantially prevented from becoming short-circuited.

[0127] As shown in FIG. 7, the first and second wires 40 and 150 may beoverlapped and bonded to the first pad 12. In this case, the second wire150 may be overlapped on the first wire 40, or the first wire 40 may beoverlapped on the second wire 150.

[0128] In the semiconductor device and its manufacturing method, thecontents described in the first embodiment are applicable to the otherstructures and effects.

[0129]FIG. 8 shows a semiconductor device in accordance with a thirdembodiment of the present invention. In the present embodiment, threesemiconductor chips 200, 210 and 220 are stacked in layers on a die pad30. In this case, the first and second semiconductor chips described inthe aforementioned embodiments correspond to two of the threesemiconductor chips 200, 210 and 220.

[0130] In FIG. 8, pads on the semiconductor chip 220 in the uppermostlayer and leads 34 are electrically connected to one another by wires230. Also, the pads on the semiconductor chip 220 in the uppermost layerand pads on the semiconductor chip 210 in the intermediate layer areelectrically connected to one another by wires 232. In this case, thesemiconductor chip 210 in the intermediate layer may be defined as afirst semiconductor chip, the semiconductor chip 220 in the uppermostlayer as a second semiconductor chip, the wires 232 as first wires, andthe wires 230 as second wires, and the contents explained in theembodiments described above can be applied as much as possible. The padson the semiconductor chip 210 in the intermediate layer and pads on thesemiconductor chip 200 in the lowermost layer are electrically connectedto one another by wires 234.

[0131]FIG. 9 shows a circuit substrate on which a semiconductor devicein accordance with the present invention is mounted. An organicsubstrate, such as, for example, a glass epoxy substrate can begenerally used as a circuit substrate 1000. Wiring patterns 1100 formedof, for example, copper or the like are formed into a desired circuit onthe circuit substrate 1000. The wiring patterns 1100 and outer leads 38of the semiconductor device 1 are bonded to one another. Also, a heatradiation member (heat spreader) 1200 is provided on the circuitsubstrate 1000, where the heat radiation member 1200 is bonded to anexposed surface of the semiconductor device 1. By so doing, heatgenerated in the first and second semiconductor chips 10 and 20 can beemanated, through the die pad 30, from the heat radiating member 1200.

[0132]FIG. 10 shows a notebook type personal computer 2000, and FIG. 11shows a mobile telephone 3000, as electronic apparatuses that includesemiconductor devices to which the present invention is applied.

[0133] The present invention is not limited to the embodiments describedabove, and many modification can be made. For example, the presentinvention may include compositions that are substantially the same asthe compositions described in the embodiments (for example, acomposition that has the same functions, the same methods and theresults, or a composition that have the same objects and results). Also,the present invention includes compositions in which portions notessential in the compositions described in the embodiments are replacedwith others. Also, the present invention includes compositions thatachieve the same functions and effects or achieve the same objects ofthose of the compositions described in the embodiments. Furthermore, thepresent invention includes compositions that include currently known orlater developed technology added to the compositions described in theembodiments.

What is claimed is:
 1. A semiconductor device, comprising: a die pad; aplurality of semiconductor chips stacked on one surface of the die pad;a lead extending toward the die pad; a first wire that is bonded to afirst pad of a first semiconductor chip among the plurality ofsemiconductor chips and to a second pad of a second semiconductor chipamong the plurality of semiconductor chips; a second wire that is bondedto the lead and to one of the first pad and the second pad; and asealing material that seals the plurality of semiconductor chips.
 2. Thesemiconductor device according to claim 1, the second semiconductor chipbeing mounted on the first semiconductor chip, and the second wire beingbonded to the lead and to the second pad.
 3. The semiconductor deviceaccording to claim 2, the second wire being lead out to pass above thefirst wire.
 4. The semiconductor device according to claim 2, the secondwire being lead out to traverse the first wire.
 5. The semiconductordevice according to claim 2, the second wire being overlapped with andbonded to the first wire on the second pad.
 6. The semiconductor deviceaccording to claim 5, the second wire including a ball formed on a tipthereof, and the ball being press-bonded to the first wire.
 7. Thesemiconductor device according to claim 2, the second wire being bondedto the second pad that is bonded to the first wire, while avoiding abonded section of the first wire.
 8. The semiconductor device accordingto claim 2, the second semiconductor chip including a plurality of thesecond pads, the plurality of the second pads including a group of padsthat are electrically connected to one another by a wiring, the firstwire being bonded to one of the group of pads, and the second wire beingbonded to another of the group of pads.
 9. The semiconductor deviceaccording to claim 2, the second pad being provided with a bump, and thefirst wire and the second wire being bonded to the second pad throughthe bump.
 10. The semiconductor device according to claim 1, the secondsemiconductor chip being mounted on the first semiconductor chip, andthe second wire being bonded to the lead and to the first pad.
 11. Thesemiconductor device according to claim 2, the first semiconductor chipbeing a memory, and the second semiconductor chip being amicroprocessor.
 12. A circuit substrate, comprising: the semiconductordevice according to claim
 1. 13. An electronic device, comprising: thesemiconductor device according to claim
 1. 14. A method formanufacturing a semiconductor device, comprising: (a) stacking aplurality of semiconductor chips on one surface of a die pad; (b)bonding a first wire to a first pad of a first semiconductor chip amongthe plurality of semiconductor chips and to a second pad of a secondsemiconductor chip among the plurality of semiconductor chips; (c)bonding a second wire to a lead that extends toward the die pad and toone of the first pad and the second pad; and (d) sealing the pluralityof semiconductor chips.
 15. The method for manufacturing a semiconductordevice according to claim 14, step (a) including mounting the secondsemiconductor chip on the first semiconductor chip, and step (c)including bonding the second wire to the lead and the second pad. 16.The method for manufacturing a semiconductor device according to claim15, step (c) including leading the second wire out to pass over thefirst wire.
 17. The method for manufacturing a semiconductor deviceaccording to claim 15, step (c) including leading the second wire out totraverse the first wire.
 18. The method for manufacturing asemiconductor device according to claim 15, step (c) including providingthe second wire so that it is overlapped with and bonded to the firstwire on the second pad.
 19. The method for manufacturing a semiconductordevice according to claim 18, step (c) including forming a ball on a tipportion of the second wire, and press-bonding the ball to the firstwire.
 20. The method for manufacturing a semiconductor device accordingto claim 18, steps (b) and (c) including bonding the first wire and thesecond wire to the second pad without forming balls.
 21. The method formanufacturing a semiconductor device according to claim 15, step (c)including bonding the second wire to the second pad that is bonded tothe first wire, while avoiding a bonded section of the first wire. 22.The method for manufacturing a semiconductor device according to claim15, the second semiconductor chip including a plurality of the secondpads, the plurality of the second pads including a group of pads thatare electrically connected to one another by a wiring, step (b)including bonding the first wire to one of the group of pads, and step(c) including bonding the second wire to another of the group of pads.23. The method for manufacturing a semiconductor device according toclaim 15, steps (b) and (c) including: providing the second pad with abump, and bonding the first wire and the second wire to the second padthrough the bump.